Electrical and optical properties of In2O3:Mo thin films prepared at various Mo-doping levels
作者： S. Kaleemulla , N. Madhusudhana Rao , M. Girish Joshi , A. Sivasankar Reddy , S. Uthanna
DOI: 10.1016/J.JALLCOM.2010.05.068
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摘要: Abstract The optically transparent conducting molybdenum-doped indium oxide thin films (In 2 O 3 :Mo) were prepared on glass substrates by an activated reactive evaporation method and the influence of molybdenum doping levels electrical optical properties had been investigated systematically. films, synthesized at a substrate temperature 573 K Mo-doping level 3 at.%, exhibited minimum resistivity 5.2 × 10 −4 Ω cm average transmittance 90% in visible region with band gap 3.68 eV.
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sci-hub.se 参考文章(34)
Lingyi Kong, Jin Ma, Fan Yang, Caina Luan, Zhen Zhu, Preparation and characterization of Ga2xIn2(1−x)O3 films deposited on ZrO2 (100) substrates by MOCVD Journal of Alloys and Compounds. ,vol. 499, pp. 75- 79 ,(2010) , 10.1016/J.JALLCOM.2010.02.092
Y Meng, A new transparent conductive thin film In2O3:Mo Thin Solid Films. ,vol. 394, pp. 218- 222 ,(2001) , 10.1016/S0040-6090(01)01142-7
Shi-Yao Sun, Jow-Lay Huang, Ding-Fwu Lii, Effects of H2 in indium–molybdenum oxide films during high density plasma evaporation at room temperature Thin Solid Films. ,vol. 469, pp. 6- 10 ,(2004) , 10.1016/J.TSF.2004.06.183
G. Frank, H. K�stlin, Electrical properties and defect model of tin-doped indium oxide layers Applied Physics A. ,vol. 27, pp. 197- 206 ,(1982) , 10.1007/BF00619080
M. F. A. M. van Hest, M. S. Dabney, J. D. Perkins, D. S. Ginley, M. P. Taylor, Titanium-doped indium oxide: A high-mobility transparent conductor Applied Physics Letters. ,vol. 87, pp. 032111- ,(2005) , 10.1063/1.1995957
S. Kaleemulla, A. Sivasankar Reddy, S. Uthanna, P. Sreedhara Reddy, Physical properties of In2O3 thin films prepared at various oxygen partial pressures Journal of Alloys and Compounds. ,vol. 479, pp. 589- 593 ,(2009) , 10.1016/J.JALLCOM.2009.01.003
B.S. Chua, S. Xu, Y.P. Ren, Q.J. Cheng, K. Ostrikov, High-rate, room temperature plasma-enhanced deposition of aluminum-doped zinc oxide nanofilms for solar cell applications Journal of Alloys and Compounds. ,vol. 485, pp. 379- 384 ,(2009) , 10.1016/J.JALLCOM.2009.05.099
Timo Asikainen, Mikko Ritala, Markku Leskelä, Atomic layer deposition growth of zirconium doped In2O3 films Thin Solid Films. ,vol. 440, pp. 152- 154 ,(2003) , 10.1016/S0040-6090(03)00822-8
S. Parthiban, V. Gokulakrishnan, K. Ramamurthi, E. Elangovan, R. Martins, E. Fortunato, R. Ganesan, High near-infrared transparent molybdenum-doped indium oxide thin films for nanocrystalline silicon solar cell applications Solar Energy Materials and Solar Cells. ,vol. 93, pp. 92- 97 ,(2009) , 10.1016/J.SOLMAT.2008.08.007
Liwei Wang, Lijian Meng, Vasco Teixeira, Shigeng Song, Zheng Xu, Xurong Xu, Structure and optical properties of ZnO:V thin films with different doping concentrations Thin Solid Films. ,vol. 517, pp. 3721- 3725 ,(2009) , 10.1016/J.TSF.2008.12.043