Opto-electronic properties of molybdenum doped indium tin oxide nanostructured thin films prepared via sol–gel spin coating

摘要: Abstract Molybdenum-doped indium tin oxide thin films were synthesized using sol–gel spin coating technique. The influence of different molybdenum-dopant contents on the electrical, optical, structural, and morphological properties characterized by means four point probe, UV–Vis–IR spectroscopy, X-ray diffraction, field emission scanning electron microscopy, atomic force microscopy. For this purpose, addition molybdenum with at a fixed 6 at% is considered as first approach. second third approaches, molybdenum-doping added constant ratios In:Sn=94:6 In:Sn=95:5, respectively. Obtained results indicate that minimum resistivity 22.3×10 −3  Ω cm optical transmittance more than 80% in region band gap 3.83 eV achieved for prepared through approach doping 0.5 5.5 at%, diffraction analysis confirmed formation cubic bixbyite structure rhombohedral molybdenum-doped small shift major peak position to lower angles molybdenum. Field microscopy micrographs do not show any specific changes grain size beside tin. Atomic studies optimum content compact surface less average roughness undoped films.