Low temperature perovskite crystallization of 70%PbMg1∕3Nb2∕3O3–30%PbTiO3 thin films deposited by sputtering and their electrical performance evaluation

摘要: PbMg1∕3Nb2∕3O3–PbTiO3 films were deposited on silicon by sputtering, followed an annealing treatment. The authors demonstrate the pure perovskite phase may be obtained at very low temperature (400°C) without any pyrochlore phase. existence of interfacial layer Pb2Nb2O7 structure is evidenced. They suggest that such serves as seed which promotes apparition permittivity annealed 450°C high (600) compared to most dielectric materials this temperature. electromechanic properties (d33=50pC∕m) are also suitable for microelectromechanical system applications with a thermal treatment compatible above integrated circuits.