High permittivity 0.9Pb(Mg1/3Nb2/3)O3-0.1PbTiO3 relaxor thin films for high-value, wide-temperature capacitor applications

摘要: High permittivity 0.9Pb(Mg1/3Nb2/3)O3-0.1PbTiO3 (PMNT) relaxor thin films with a nearly pure perovskite structure as well dense and uniform microstructure have been prepared on Pb(Zr,Ti)O3-buffered platinized silicon substrates by sol-gel method. Interestingly, the PMNT film exhibits high dielectric permittivity, er ∼ 1200, tunability, ∼70% under moderate E = 333 kV/cm, over wide temperature range. These results are explained in terms of behavior film. Moreover, leakage current density is reasonably low, roughly 5.2 × 10−6 A/cm2 at an electric field intensity 400 kV/cm. As dc increases, mechanism transformed from ohmic law to Fowler–Nordheim tunneling mechanism. All obtained indicate that good candidate for high-value, wide-temperature capacitor applications.