Epitaxial Pb(Mg1/3Nb2/3)O3 thin films synthesized by metal-organic chemical vapor deposition
作者： G. R. Bai , S. K. Streiffer , P. K. Baumann , O. Auciello , K. Ghosh
DOI: 10.1063/1.126538
关键词:
摘要: Metal-organic chemical vapor deposition was used to prepare Pb(Mg1/3Nb2/3)O3 (PMN) thin films on (001) SrTiO3 and SrRuO3/SrTiO3 substrates, using solid Mg β-diketonate as the precursor. Parameters including precursor ratio in phase, growth temperature, rate, reaction pressure reactor chamber were varied order determine suitable conditions for producing phase-pure, epitaxial PMN films. A cube-on-cube orientation relationship between film substrate found, with a rocking curve width of 0.1°, in-plane rocking-curve 0.8°. The root-mean-square surface roughness 200-nm-thick 2 3 nm measured by scanning probe microscopy. zero-bias dielectric constant loss at room temperature 10 kHz approximately 1100 2%, respectively. remnant polarization this 16 μC/cm2.
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