Low temperature gettering of Cu, Ag, and Au across a wafer of Si by Al

作者: R. D. Thompson , K. N. Tu

DOI: 10.1063/1.93565

关键词: SiliconAluminiumAnnealing (metallurgy)MetallurgyCopperAnalytical chemistryMaterials scienceGetterWaferNoble metalSpectroscopyPhysics and Astronomy (miscellaneous)

摘要: … they have diffused across the Si wafer at this low temperature and are gettered by the Al to a … for Cu, Ag, and Au after the annealing, respectively. These spectra indicate that only …

参考文章(11)
W. R. Wilcox, T. J. LaChapelle, Mechanism of Gold Diffusion into Silicon Journal of Applied Physics. ,vol. 35, pp. 240- 246 ,(1963) , 10.1063/1.1713077
J. M. Dishman, S. E. Haszko, R. B. Marcus, S. P. Murarka, T. T. Sheng, Electrically active stacking faults in CMOS integrated circuits Journal of Applied Physics. ,vol. 50, pp. 2689- 2696 ,(1979) , 10.1063/1.326228
R. N. Hall, J. H. Racette, Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium Arsenide Journal of Applied Physics. ,vol. 35, pp. 379- 397 ,(1964) , 10.1063/1.1713322
J. M. Poate, K. N. Tu, J. W. Mayor, Archibald L. Fripp, Thin Films—Interdiffusion and Reactions Journal of The Electrochemical Society. ,vol. 126, ,(1979) , 10.1149/1.2129351
D. Lecrosnier, J. Paugam, G. Pelous, F. Richou, M. Salvi, Gold gettering in silicon by phosphorous diffusion and argon implantation: Mechanisms and limitations Journal of Applied Physics. ,vol. 52, pp. 5090- 5097 ,(1981) , 10.1063/1.329407
E. Nes, J. Washburn, Transmission electron microscope investigation of the growth of copper precipitate colonies in silicon Journal of Applied Physics. ,vol. 44, pp. 3682- 3688 ,(1973) , 10.1063/1.1662820
F. Barson, M. S. Hess, M. M. Roy, Diffusion Pipes in Silicon NPN Structures Journal of The Electrochemical Society. ,vol. 116, pp. 304- 307 ,(1969) , 10.1149/1.2411820
W. K. Tice, T. Y. Tan, Nucleation of CuSi precipitate colonies in oxygen‐rich silicon Applied Physics Letters. ,vol. 28, pp. 564- 565 ,(1976) , 10.1063/1.88825
T.M. Buck, K.A. Pickar, J.M. Poate, C‐M. Hsieh, Gettering rates of various fast‐diffusing metal impurities at ion‐damaged layers on silicon Applied Physics Letters. ,vol. 21, pp. 485- 487 ,(1972) , 10.1063/1.1654228
S. M. Hu, M. R. Poponiak, Habit and Morphology of Copper Precipitates in Silicon Journal of Applied Physics. ,vol. 43, pp. 2067- 2074 ,(1972) , 10.1063/1.1661455