Luminescence investigation on strained Si1-xGex/Si modulated quantum wells
作者： S. Fukatsu
DOI: 10.1016/0038-1101(94)90305-0
关键词: Diffusion (business) 、 Red shift 、 Chemistry 、 Luminescence 、 Superlattice 、 Photoluminescence 、 Coupling 、 Peak shift 、 Condensed matter physics 、 Quantum well
摘要: Abstract Luminescence characterization is presented on potential-modulated strained Si 1− x Ge /Si(100) quantum wells. Interwell coupling was studied in a series of coupled wells (CQW) with an intervening barrier for symmetric and asymmetric configurations. Systematic red shift photoluminescence peak energy observed CQWs decreasing width centered at CQW. further evidenced luminescence as spectral dominance switch between the narrower wider wells, reflecting tunneling-controlled carrier transfer. Evolution Kronig-Penney superlattice state consistent change structural parameters. Diffusion induced blue-shift amounting to 22 meV observed.
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