Photoelectron spectroscopy study of Al–Cu interfaces
作者： J Geng , P Oelhafen , None
DOI: 10.1016/S0039-6028(00)00312-5
关键词: Analytical chemistry 、 Cavity magnetron 、 Chemistry 、 Sputter deposition 、 Monolayer 、 Substrate (electronics) 、 Stoichiometry 、 Alloy 、 Intermetallic 、 X-ray photoelectron spectroscopy
摘要: Abstract Reactions at Al–Cu interfaces were investigated by ultraviolet and monochromatized X-ray photoelectron spectroscopy (UPS–HeI/II, MXPS). Al was deposited step on high purity Cu substrates various substrate temperatures RF magnetron sputtering. The oxygen contamination as determined MXPS always below 5%. For the ambient 100°C both UPS results indicate formation of a thin Al-rich alloy few monolayers interface. A totally different behaviour observed for 200 300°C temperatures. reaction interface still present after nominal coverage more than 100 monolayers. Presumably, Cu-rich intermetallic compounds formed, stoichiometry depending temperature deposition rate.
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