Method for fabricating a capacitor cell in the semiconductor memory device having a step portion
作者： Young K. Jun
DOI:
关键词: Node (circuits) 、 Plate electrode 、 Electrical engineering 、 Transistor 、 Optoelectronics 、 Dielectric 、 Electrode 、 Semiconductor memory 、 Materials science 、 Capacitor 、 Capacitance
摘要: A semiconductor memory device including a plurality of cells arranged in matrix manner, each the transfer transistor constituted by gate electrode, insulating film, source region and drain region, charge storage capacitor node, dielectric film plate node cylindrical lower electrode formed above via an layer on connected to one transistor, cover type upper with electrode. By composite structure having cylinder shape structure, it is possible utilize efficiently three-dimensional space thereby achieve increase capacitance.
lens.org 参考文章(5)
Akihiro Nitayama, Kazumasa Sunouchi, Fumio Horiguchi, Satoshi Inoue, MOS type dynamic random access memory ,(1990)
Howard E. Rhodes, Hiang C. Chan, Yauh-Ching Liu, Chuck H. Dennison, Pierre Fazan, Process to fabricate a double ring stacked cell structure ,(1991)
Young K. Jun, Method for fabricating a semiconductor memory cell ,(1992)
Shinichirou Copo Hichifukudaiichi Ikemasu, Dynamic random access memory device ,(1990)
Ji-hong Ahn, High density semiconductor memory device (MBC cell) ,(1991)