Anisotropic etching characteristics of silicon in TMAH:IPA:pyrazine solutions

摘要: This paper presents anisotropic etching characteristics of single-crystal silicon in tetramethylammonium hydroxide (TMAH):isopropyl alcohol (IPA) solutions containing pyrazine. With the addition IPA to TMAH solutions, are exhibited that indicate an improvement flatness on front and a reduction undercutting, but etch rate (100) is decreased. The improved by An 0.8 μm/min, which faster 13% than 20 wt.% solution pure TMAH, obtained using TMAH:0.5 g/100 ml pyrazine decreased if more added. 25 solution, variations were not observed undercutting ratio was reduced 30-50%.