Preparation of ferroelectric field effect transistor based on sustainable strongly correlated (Fe,Zn)3O4 oxide semiconductor and their electrical transport properties
作者： Junichi Takaobushi , Teruo Kanki , Tomoji Kawai , Hidekazu Tanaka
DOI: 10.1063/1.3564885
关键词: Spintronics 、 Heterojunction 、 Magnetic semiconductor 、 Field-effect transistor 、 Materials science 、 Curie temperature 、 Ferroelectricity 、 Contact resistance 、 Condensed matter physics 、 Electric field
摘要: We have constructed a field effect transistor structure composed of the sustainable oxide semiconductor (Fe,Zn)3O4 with high Curie temperature and ferroelectric Pb(Zr,Ti)O3. Electric control (Fe2.5Zn0.5)O4 channel resistance was achieved in heterostructures though modulation their carrier concentration. The results will lead to significant development spintronics devices working at room temperature.
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