Stacking semiconductor device and production method thereof

作者: Takehiro Suzuki , Yasushi Takeuchi

DOI:

关键词: SolderingFlip chipThermosetting polymerComposite materialStackingThermal expansionElastic modulusMaterials scienceSemiconductor deviceTerminal (electronics)

摘要: In a stacking semiconductor device in which first-layer and second-layer devices are stacked bonded with solder, warpage occurs due to difference thermal expansion coefficient of constituent members or elastic modulus individual members. Therefore, between the provided an external connection terminal solder thermosetting resin, is heated at 150 180° C., temperatures preheating for reflow 30 90 seconds. Thereby reduced resin cured completely this state. Then, temperature raised bonding using performed. Thereby, reliability solder-bonded portion considerably improved.

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