Ultrahigh density vertical NAND memory device
作者： Johann Alsmeier
DOI:
关键词: Materials science 、 Perpendicular 、 Electrode 、 Communication channel 、 Optoelectronics 、 Substrate (printing) 、 NAND gate 、 Dielectric 、 Semiconductor 、 Blocking (radio) 、 Electrical engineering
摘要: Monolithic, three dimensional NAND strings include a semiconductor channel, at least one end portion of the channel extending substantially perpendicular to major surface substrate, plurality control gate electrodes having strip shape parallel blocking dielectric comprising segments, discrete charge storage and tunnel located between each segments channel.
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