Methods for forming etch stop layers, semiconductor devices having the same, and methods for fabricating semiconductor devices
作者： Jaegoo Lee , Youngwoo Park
DOI:
关键词: Optoelectronics 、 Materials science 、 Semiconductor device 、 Semiconductor materials 、 Layer (electronics) 、 Vertical direction 、 Electronic engineering 、 Electrical conductor
摘要: A plurality of vertical channels semiconductor material are formed to extend in a direction through the insulation layers and conductive patterns, gate insulating layer between pattern that insulates from channels. Conductive contact regions at least two patterns stepped configuration. An etch stop is positioned on regions, wherein has first portion one second thickness greater than portion.
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