Semiconductor memory and method for manufacturing the same
作者： Masaru Kidoh , Ryota Katsumata , Hideaki Aochi , Mitsuru Sato , Hiroyasu Tanaka
DOI:
关键词:
摘要: According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory including: plurality devices each having: resistance change element, and diode connected serially element; source conductive layer spreading two-dimensionally be one ends devices.
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