Programmable eraseless memory
作者： Tao Lu , Wen Tsai , Chih Yeh , Chih Lu , Han Lai
DOI:
关键词: Electrode 、 Progressive change 、 Voltage 、 Materials science 、 Layer (object-oriented design) 、 Memory cell 、 Electrical engineering 、 Process (computing)
摘要: An electrically programmable non-volatile memory cell comprises a first electrode, second electrode and an inter-electrode layer, such as ultra-thin oxide, between the electrodes which is characterized by progressive change in resistance response to program stress of relatively low voltages. A representing stored data established stressing layer electrodes. Embodiments are adapted store multiple bits per and/or for programming more than one time without erase process.
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