System and method for one-time programmed memory through direct-tunneling oxide breakdown

摘要: A one-time programming memory element, capable of being manufactured in a 0.13 μm or below CMOS technology, having capacitor, transistor configured as with an oxide layer passing direct gate tunneling current. Also included is write switch, first and second switches coupled to the read switch also capacitor. The capacitor/transistor programmable anti-fuse by application program voltage across via cause current rupture form conductive path resistance approximately hundreds ohms less.