Polarity-dependent tunneling current and oxide breakdown in dual-gate CMOSFETs
作者： Ying Shi , T.P. Ma , S. Prasad , S. Dhanda
DOI: 10.1109/55.720196
关键词:
摘要: The gate tunneling leakage current in dual-gate CMOSFETs exhibits strong polarity dependence when measured inversion, although it practically no accumulation. Specifically, p/sup +/-gate pMOSFET shows substantially lower than n/sup nMOSFET inversion. This arises from the difference supply of electrons. dependent has a significant impact on oxide reliability measurements. For example, gives rise to higher T/sub bd/ value for +//pMOSFET as compared that +//nMOSFET both are biased Rationaless given why is better gauge Q/sub assessment, and more prone breakdown under normal operating conditions.
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