High current Ni-ion implantation into Al films
作者： K.Y. Gao , B.X. Liu
DOI: 10.1016/S0168-583X(97)00397-2
关键词: Ion source 、 Vacuum arc 、 Surface layer 、 Phase (matter) 、 Analytical chemistry 、 Beam (structure) 、 Materials science 、 Current density 、 Ion implantation 、 Volume fraction
摘要: Abstract The Al3Ni strengthening phase was formed by Ni-ion implantation into Al films using a Metal Vapor Vacuum Arc (MEVVA) ion source. depth distribution of the volume fraction 3 Ni found to depend on current density as well dose. At fixed dose × 1017cm−2 and implanting with 25 μA/cm2, most grown in near surface layer. While increasing up 89 distributed uniformly relatively deep region. When μA/cm2 6 1017cm−2, addition distributing region, also detected high content surface. temperature rise during caused beam heating responsible for formation phase, which turn modifies mechanical properties films.
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