Structural and chemical changes in Ga doped Ge S glassy alloy
作者： Anjli Rana , Bhanu Pratap Singh , Raman Sharma
DOI: 10.1016/J.JNONCRYSOL.2019.119597
关键词: Crystallography 、 Infrared spectroscopy 、 Glassy alloy 、 Doping 、 Reduced mass 、 X-ray photoelectron spectroscopy 、 Alloy 、 Thin film 、 Materials science 、 Raman spectroscopy
摘要: Abstract Structural changes developed in Ge S glassy alloy with incorporation of Ga have been investigated using vibrational spectroscopy. Thermal evaporation technique has employed to deposit thin films Ge20S80−xGax alloy. transformations bulk and examined from Raman FTIR spectra recorded at room temperature. Observed left shift the right IR are consequence increase reduced mass occupy sites, due atomic similarity, results formation Ge(Ga)S4 tetrahedra units S3Ge(Ga)-(Ga)GeS3 ethane like structures. Broadening bands concentration reveals conception bonds. Chemical Ge-S-Ga glass correlated XPS (X-ray photoelectron spectroscopy) chemical shift. X-ray spectroscopy analyses reveal existence metal-metal bonds violation ordered network model.
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