Structure for contact formation using a silicon-germanium alloy
作者： Randhir P. S. Thakur
DOI:
关键词: Alloy 、 Silicon 、 Metallurgy 、 Silicon-germanium 、 Doping 、 Germanium 、 Materials science 、 Optoelectronics 、 Contact formation 、 Annealing (metallurgy) 、 Electrical resistivity and conductivity
摘要: A new method and structure for an improved contact using doped silicon is provided. The structures are integrated into several higher level embodiments. has low resistivity. Improved junctions thus provided between IGFET device subsequent metallization layers. improvements obtained through the use of a silicon-germanium (Si—Ge) alloy. alloy can be formed from depositing germanium onto substrate subsequently annealing or by selectively preformed opening. above advantages incorporated with relatively few process steps.
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