Schottky barrier heights of W on Si1−xGex alloys
作者： V. Aubry , F. Meyer , P. Warren , D. Dutartre
DOI: 10.1063/1.110468
关键词:
摘要: The Schottky barrier height of W on p‐type Si1−xGex/Si has been investigated as a function composition (10%≤x≤33%) and Si1−xGex thickness for given composition. decreases with increasing Ge fraction follows the rate strain relaxation. These results suggest that Fermi level at interface is pinned relative to conduction band.
scitation.org
harvard.edu
aip.org 
sci-hub.se 参考文章(14)
W.-X. Ni, J. Knall, G.V. Hansson, Strain-affected band offsets at Si/Si1−xGex(100) heterojunction interfaces studies with x-ray photoemission Surface Science. ,vol. 189, pp. 379- 384 ,(1987) , 10.1016/S0039-6028(87)80456-9
M.O. Aboelfotoh, Temperature dependence of the Schottky-barrier height of tungsten on n-type and p-type silicon Solid-State Electronics. ,vol. 34, pp. 51- 55 ,(1991) , 10.1016/0038-1101(91)90200-I
G. Margaritondo, Do We Understand Heterojunction Band Discontinuities Surface Science. ,vol. 168, pp. 439- 453 ,(1986) , 10.1016/0039-6028(86)90874-5
Hiroyuki Kanaya, Fumio Hasegawa, Eiso Yamaka, Takashi Moriyama, Masakatsu Nakajima, Reduction of the Barrier Height of Silicide/p-Si 1− x Ge x Contact for Application in an Infrared Image Sensor Japanese Journal of Applied Physics. ,vol. 28, ,(1989) , 10.1143/JJAP.28.L544
Rubin Braunstein, Arnold R. Moore, Frank Herman, Intrinsic Optical Absorption in Germanium-Silicon Alloys Physical Review. ,vol. 109, pp. 695- 710 ,(1958) , 10.1103/PHYSREV.109.695
J. Tersoff, Recent models of Schottky barrier formation Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 3, pp. 1157- 1161 ,(1985) , 10.1116/1.583031
A. Buxbaum, E. Zolotoyabko, M. Eizenberg, F. Schäffler, Strain relaxation in epitaxial Si1-xGex/Si(100) layers induced by reaction with palladium Thin Solid Films. ,vol. 222, pp. 157- 160 ,(1992) , 10.1016/0040-6090(92)90059-K
H. K. Liou, X. Wu, U. Gennser, V. P. Kesan, S. S. Iyer, K. N. Tu, E. S. Yang, Interfacial reactions and Schottky barriers of Pt and Pd on epitaxial Si1−xGex alloys Applied Physics Letters. ,vol. 60, pp. 577- 579 ,(1992) , 10.1063/1.106615
O. Thomas, S. Delage, F. M. d’Heurle, G. Scilla, Reaction of titanium with germanium and silicon‐germanium alloys Applied Physics Letters. ,vol. 54, pp. 228- 230 ,(1989) , 10.1063/1.101444
D. Dutartre, P. Warren, I. Berbezier, P. Perret, Low temperature silicon and Si1−xGex epitaxy by rapid themal chemical vapour deposition using hydrides Thin Solid Films. ,vol. 222, pp. 52- 56 ,(1992) , 10.1016/0040-6090(92)90037-C