Strain relaxation in epitaxial Si1-xGex/Si(100) layers induced by reaction with palladium
作者： A. Buxbaum , E. Zolotoyabko , M. Eizenberg , F. Schäffler
DOI: 10.1016/0040-6090(92)90059-K
关键词:
摘要: Abstract In this work we observed strain relaxation at 550 °C following the interaction of palladium with strained Si 1− x Ge epilayers. The germanium concentrations in films were 0.09 and 0.21 thicknesses 3500 A 2300 respectively, which are below critical thickness h c . An overlayer palladium, 1300 thick, was deposited onto epilayers, samples annealed 250 a vacuum furnace for compound formation. Low temperature anneals (250 °C) characterized by formation uniform, highly textured ternary (Pd 2 y ) on top unreacted layer, no substantial change state underlying layer. On contrary, higher anneal (550 metallized double-layer structure, defected germanium-rich z layer (0.37 these considerable decrease vertical lattice parameter correspondingly observed.
harvard.edu
elsevier.com
sci-hub.se 参考文章(11)
RJ Hauenstein, BM Clemens, RH Miles, OJ Marsh, ET Croke, TC McGill, Strain relaxation kinetics in Si1−xGex/Si heterostructures Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 7, pp. 767- 774 ,(1989) , 10.1116/1.584598
J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory, R. T. Lynch, Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxy Applied Physics Letters. ,vol. 44, pp. 102- 104 ,(1984) , 10.1063/1.94571
Brian W. Dodson, Nature of misfit dislocation sources in strained-layer semiconductor structures Applied Physics Letters. ,vol. 53, pp. 394- 396 ,(1988) , 10.1063/1.99889
J.W. Matthews, A.E. Blakeslee, S. Mader, Use of misfit strain to remove dislocations from epitaxial thin films Thin Solid Films. ,vol. 33, pp. 253- 266 ,(1976) , 10.1016/0040-6090(76)90085-7
A. T. Fiory, J. C. Bean, L. C. Feldman, I. K. Robinson, Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100) Journal of Applied Physics. ,vol. 56, pp. 1227- 1229 ,(1984) , 10.1063/1.334055
V. Higgs, P. Kightley, P. J. Goodhew, P. D. Augustus, Metal‐induced dislocation nucleation for metastable SiGe/Si Applied Physics Letters. ,vol. 59, pp. 829- 831 ,(1991) , 10.1063/1.105249
A. Buxbaum, M. Eizenberg, A. Raizman, F. Schäffler, Interaction of Pd with Strained Layers of Si1-xGexEpitaxially Grown on Si(100) Japanese Journal of Applied Physics. ,vol. 30, pp. 3590- 3593 ,(1991) , 10.1143/JJAP.30.3590
E. A. Fitzgerald, G. P. Watson, R. E. Proano, D. G. Ast, P. D. Kirchner, G. D. Pettit, J. M. Woodall, Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area Journal of Applied Physics. ,vol. 65, pp. 2220- 2237 ,(1989) , 10.1063/1.342834
C. J. Gibbings, C. G. Tuppen, M. Hockly, Dislocation nucleation and propagation in Si0.95Ge0.05 layers on silicon Applied Physics Letters. ,vol. 54, pp. 148- 150 ,(1989) , 10.1063/1.101212
D.C. Paine, D.J. Howard, N.G. Stoffel, J.A. Horton, The growth of strained Si 1− x Ge x alloys on 〈001〉 silicon using solid phase epitaxy Journal of Materials Research. ,vol. 5, pp. 1023- 1031 ,(1990) , 10.1557/JMR.1990.1023