Rectifying and Schottky characteristics of a-SixGe1−xOy with metal contacts1

作者: Md Muztoba , Mukti Rana

DOI: 10.1139/CJP-2013-0614

关键词:

摘要: Metal–semiconductor contacts are a vital part of semiconductor devices as they can form Schottky barrier or an Ohmic contact. The nature the contact plays important role in determining ...

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