Development of silicon strip detectors for a medium energy gamma-ray telescope
作者： P Bloser , F Schopper , R Andritschke , G Kanbach , A Zoglauer
DOI: 10.1016/S0168-9002(03)01897-7
关键词: STRIPS 、 Detector 、 Stack (abstract data type) 、 Fermi Gamma-ray Space Telescope 、 Physics 、 Wafer 、 Optics 、 Silicon 、 Nitride 、 Optoelectronics 、 X-ray detector
摘要: Abstract We report on the design, production, and testing of advanced double-sided silicon strip detectors under development at Max-Planck-Institute as part Medium Energy Gamma-ray Astronomy (MEGA) project. The are designed to form a stack, “tracker,” with goal recording paths energetic electrons produced by Compton-scatter pair-production interactions. Each layer tracker is composed 3×3 array 500 μm thick wafers, each 6 cm×6 cm fitted 128 orthogonal p n strips opposite sides (470 μm pitch). biased using punch-through principle AC-coupled via metal separated from implant an insulating oxide/nitride layer. adjacent wafers in wire-bonded series read out 128-channel TA1.1 ASICs, creating total 19 cm×19 cm position-sensitive area. At 20°C typical energy resolution 15–20 keV FWHM, position 290 μm, time ∼1 μs observed.
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