Epitaxial growth of metal single-crystal films
作者： Enrique Grünbaum
DOI: 10.1016/0042-207X(74)90048-7
关键词: Halide 、 Crystallography 、 Epitaxy 、 Alkali metal 、 Single crystal film 、 Annealing (metallurgy) 、 Metal 、 Materials science 、 Cleavage (crystal) 、 Crystallographic defect
摘要: Abstract A review of the epitaxial growth metals in high and ultra-high vacuum leading to single-crystal films is presented. The conditions for obtaining such are described tabulated two groups substrates: (i) metals, Si, Ge (strong interfacial bonding) (ii) alkali halides MgO cleavage faces (weak bonding). Information on crystal defects their relation with parameters annealing procedures also given.
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