EEPROM-backed FIFO memory
作者： Anil Gupta
DOI:
关键词: Backup 、 Overhead (engineering) 、 Embedded system 、 FIFO (computing and electronics) 、 Sram cell 、 EEPROM 、 State (computer science) 、 Fifo memory 、 Static random-access memory 、 Engineering
摘要: A first-in, first-out (FIFO) static random access memory (SRAM) device includes EEPROM cells which provide non-volatile backup capability. The sizing of each SRAM cell is such that its associated automatically programmed via the output cell. Upon power-up, restores to inverse whatever state it was in prior most recent programming (before a preceding power-down). This provides non-volatility without significant increase manufacturing costs or overhead.
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