Cu and Ag deposition on layeredp-typeWSe2: Approaching the Schottky limit

摘要: The interaction of Cu and Ag on the van der Waals (0001) face p-type ${\mathrm{WSe}}_{2}$ has been investigated in relation to Schottky-barrier formation Schottky solar cells using x-ray uv photoelectron spectroscopy (XPS,UPS), low-energy electron diffraction (LEED), surface photovoltage measurements. XPS UPS results show growth a metallic overlayer for small coverages without detectable any interfacial reaction layer. In addition, LEED experiments indicate epitaxially grown (111) metal layers form clusters. Therefore, we conclude that an atomically abrupt interface between semiconductor M(111) overlayers is formed. observed band bending obtained from binding-energy shifts corresponds work-function difference following Schottky-Mott theory. However, measured at 300 100 K not good correspondence thermionic-emission model barriers. alternative suggested considering n-type doping due intercalation adsorbed atoms.