Effects of LNO buffer layers on electrical properties of BFO-PT thin films on stainless steel substrates
作者： Susu Wang , Hao Wang , Jie Jian , Jianguo Chen , Jinrong Cheng
DOI: 10.1016/J.JALLCOM.2019.01.033
关键词: Thin film 、 Dielectric loss 、 Buffer (optical fiber) 、 Ferroelectricity 、 Polarization (electrochemistry) 、 Composite material 、 Crystallinity 、 Dielectric 、 Materials science
摘要: Abstract Ferroelectric 0.7BiFeO3-0.3PbTiO3 (BFO-PT) thin films were deposited on LaNiO3 (LNO) coated stainless steel (SS) substrates by the sol-gel method. XRD results indicate that both LNO and BFO-PT have perovskite structure film crystallinity is improved with increasing thickness. The dielectric loss of reduced significantly addition buffer layers, achieving about 4% at frequency 1 kHz, much lower than >20% for directly SS substrates. reveal strong ferroelectricity remnant polarization (Pr) 35 μC/cm2 390 nm. Moreover, layers mitigates deterioration after 1.33 × 108 switching cycles resulting in anti-fatigue properties films. Our BFO-PT/LNO multilayer maintain excellent ferroelectric properties.
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