作者: Ya Nie
DOI: 10.1117/1.1511531
关键词: Silicon 、 Laser 、 Grating 、 Substrate (electronics) 、 Beam (structure) 、 Materials science 、 Silicon nitride 、 Optics 、 Refractive index 、 Optoelectronics 、 Semiconductor laser theory
摘要: Guided-mode resonances in subwavelength gratings are strongly dependent on incident angles. A beam selector with high sensitivity is designed based this property. guided-mode resonant silicon nitride (Si 3 N 4 ) grating a dioxide (SiO 2 substrate presented as an example of such device 1.55 μm wavelength. The calculated reflection resonance has angle FWHM Δθ~0.0042 radians, and normal-incident peak efficiency ~99.9%. In addition, we propose that type be applied to select transverse modes semiconductor lasers.