Semiconductor ultraviolet photodetectors based on ZnO and MgxZn1−xO
作者： Yaonan Hou , Zengxia Mei , Xiaolong Du
DOI: 10.1088/0022-3727/47/28/283001
关键词: Photodetector 、 Solid-state 、 Electronic properties 、 The Renaissance 、 Ultraviolet 、 Semiconductor 、 Optoelectronics 、 Materials science
摘要: It is indispensable to develop wide-band-gap based ultraviolet (UV) photodetectors (PDs), which are one of the basic building blocks solid state UV optoelectronic devices. In last two decades, we have witnessed renaissance ZnO as a semiconductor and an enormous development ZnO-based PDs result its superb optical electronic properties. Since first demonstration, great variety on related materials been proposed demonstrated. These PDs, with diverse device geometries, exhibit either high performance or multiple functions, reflecting state-of-the-art technology optoelectronics. this review, study latest progress made MgxZn1−xO, representative alloy for band-gap engineering techniques. The discussion focuses behind physics according architecture PDs.
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