Electrical properties of metal‐polymer (polysterene) silicon devices
作者： D. Sanchez , M. Carchano , A. Bui
DOI: 10.1063/1.1663394
关键词: Composite material 、 Capacitor 、 Polymerization 、 Hysteresis 、 Sense (electronics) 、 Polymer 、 Glow discharge 、 Capacitance 、 Silicon 、 Materials science
摘要: The electrical properties of metal‐polymer‐silicon (MPS) structures have been investigated. Polymer films deposited on silicon substrates by using polymerization a styrene monomer vapor in an ac glow discharge. A close examination the hysteresis shown C(V) curves MPS capacitors has made. sense this reverses when bias‐sweep frequency is reduced. variation flat‐band voltage shift polarizing varies with regular steps between symmetrical extremes determined respect to hysteresis. It that effect temperature very important shift. This appreciably step applied structure and it short circuited. may be concluded charge variations leading dynamic capacitance curve are due injection carriers polymer film from both metal o...
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