Three-dimensional etching of silicon substrates using a modified deep reactive ion etching technique

摘要: We report realization of highly featured three-dimensional micro- and nano-structures on silicon substrates with a single masking layer using hydrogen-assisted deep reactive ion etching process. Three gases oxygen, hydrogen SF6 are used in sequential passivation process to achieve high aspect ratio features. By controlling the flows these power timing each subsequence, it is possible desired vertical controlled underetching recovery, yielding features directly substrates. Etch rates up 0.75 µm min−1 have been obtained low plasma density 1 W cm−2. Also controllable more than 8 sidewall recession achieved. The structures can be as mold for polymers well holding substrate projection display applications where an electro-chromic material (WO3) has used.