Realization of complex three-dimensional free-standing structures on silicon substrates using controllable underetching in a deep reactive ion etching
作者： A Sandoughsaz , S Azimi , H Mazreati , S Mohajerzadeh
DOI: 10.1088/0960-1317/23/3/035022
关键词: Silicon 、 Dry etching 、 Deep reactive-ion etching 、 Passivation 、 Nanotechnology 、 Etching (microfabrication) 、 Reactive-ion etching 、 Isotropic etching 、 Surface micromachining 、 Materials science
摘要: We report the realization of three-dimensional free-standing structures with high complexity on silicon substrates without using surface micromachining. The etching is feasible reactive ion method in which three gases are used a two-step process. passivation step carried out by means hydrogen, oxygen and sulfur-hexafluoride (SF6) while uses SF6 low-density capacitive-coupled radio frequency reactor. overall process can be adjusted to arrive at desired underetchings. formation partially fully suspended reported. Multi-level floated have been realized this method.
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