Ultra Deep Reactive Ion Etching of High Aspect-Ratio and Thick Silicon Using a Ramped-Parameter Process
作者： Yemin Tang , Amin Sandoughsaz , Kevin J. Owen , Khalil Najafi
DOI: 10.1109/JMEMS.2018.2843722
关键词:
摘要: … Researchers have found ways to reduce these ARDE effects by adjusting process parameters. … new process with ramped process parameters, and will compare it with the standard fixed-…
sci-hub.se 参考文章(44)
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