Simulation of microloading and ARDE in DRIE
作者： M.A. Gosalvez , Y. Zhou , Y. Zhang , G. Zhang , Y. Li
DOI: 10.1109/TRANSDUCERS.2015.7181158
关键词:
摘要: … By deviating form the standard approach to the simulation of DRIE, this study shows that (i) the vertical etching component due to the accelerated ions can be considered to be constant, …
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