Accurate Depth Control of Through-Silicon Vias by Substrate Integrated Etch Stop Layers
作者： M. Wietstruck , S. Marschmeyer , M. Lisker , A. Krueger , D. Wolansky
关键词: Fabrication 、 Smart system 、 Optoelectronics 、 Substrate (electronics) 、 Bonding process 、 Nanotechnology 、 BiCMOS 、 Trench 、 Materials science 、 Etching (microfabrication) 、 Silicon
摘要: In this work, the development of engineered silicon substrates for a novel via-middle TSV integration concept is demonstrated. These include 3D buried etch-stop layers which provide both an ideal vertical and lateral trench etching thus enabling simultaneous realization different size TSVs on same substrate. Beside standard BiCMOS fabrication steps, only low-temperature fusion bonding process applied realized without adding additional mask to established technology. As result, developed technique very promising realize dimensions substrate future smart system applications.
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