Impact of interlayer processing conditions on the performance of GaN light-emitting diode with specific NiOx/graphene electrode.
作者： Byung Jin Cho , Eun-Kyung Suh , Chang-Hee Hong , S. Chandramohan , Ji Hye Kang
DOI: 10.1021/AM3026079
关键词: Ohmic contact 、 Light-emitting diode 、 Materials science 、 Graphene nanoribbons 、 Graphene oxide paper 、 Optoelectronics 、 Quantum tunnelling 、 Nanotechnology 、 Annealing (metallurgy) 、 Thin film 、 Graphene
摘要: This paper reports on the evaluation of impact introducing interlayers and postmetallization annealing graphene/p-GaN ohmic contact formation performance associated devices. Current–voltage characteristics contacts with ultrathin Au, Ni, NiOx were studied using transmission line model circular geometry. Direct interface was identified to be highly rectifying improved as a result adhesion between graphene p-GaN. Ohmic realized when interlayer is introduced p-GaN followed by annealing. Temperature-dependent I–V measurements revealed that current transport modified from thermionic field emission for direct tunneling graphene/metal/p-GaN contacts. The mechanism results interfacial reactions occur ...
acs.org
sci-hub.se 参考文章(36)
Jayeeta Lahiri, Travis S Miller, Andrew J Ross, Lyudmyla Adamska, Ivan I Oleynik, Matthias Batzill, Graphene growth and stability at nickel surfaces New Journal of Physics. ,vol. 13, pp. 025001- ,(2011) , 10.1088/1367-2630/13/2/025001
Jung Min Lee, Hae Yong Jeong, Kyoung Jin Choi, Won Il Park, Metal/graphene sheets as p-type transparent conducting electrodes in GaN light emitting diodes Applied Physics Letters. ,vol. 99, pp. 041115- ,(2011) , 10.1063/1.3595941
T. V. Blank, Yu. A. Gol’dberg, O. V. Konstantinov, V. G. Nikitin, E. A. Posse, The mechanism of current flow in an alloyed In-GaN ohmic contact Semiconductors. ,vol. 40, pp. 1173- 1177 ,(2006) , 10.1134/S1063782606100095
Jae-Phil Shim, DoHyung Kim, Minhyeok Choe, Takhee Lee, Seong-Ju Park, Dong-Seon Lee, A self-assembled Ag nanoparticle agglomeration process on graphene for enhanced light output in GaN-based LEDs Nanotechnology. ,vol. 23, pp. 255201- ,(2012) , 10.1088/0957-4484/23/25/255201
June O Song, Kyoung-Kook Kim, Seong-Ju Park, Tae-Yeon Seong, Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN Applied Physics Letters. ,vol. 83, pp. 479- 481 ,(2003) , 10.1063/1.1591236
Pranav Gupta, Titas Dutta, Siddhartha Mal, Jagdish Narayan, Controlled p-type to n-type conductivity transformation in NiO thin films by ultraviolet-laser irradiation Journal of Applied Physics. ,vol. 111, pp. 013706- ,(2012) , 10.1063/1.3671412
Yiyun Zhang, Liancheng Wang, Xiao Li, Xiaoyan Yi, Ning Zhang, Jing Li, Hongwei Zhu, Guohong Wang, Annealed InGaN green light-emitting diodes with graphene transparent conductive electrodes Journal of Applied Physics. ,vol. 111, pp. 114501- ,(2012) , 10.1063/1.4723813
Jung Min Lee, Jaeseok Yi, Won Woo Lee, Hae Yong Jeong, Taeil Jung, Youngchae Kim, Won Il Park, ZnO nanorods-graphene hybrid structures for enhanced current spreading and light extraction in GaN-based light emitting diodes Applied Physics Letters. ,vol. 100, pp. 061107- ,(2012) , 10.1063/1.3683484
Zengguang Cheng, Qiaoyu Zhou, Chenxuan Wang, Qiang Li, Chen Wang, Ying Fang, Toward intrinsic graphene surfaces: a systematic study on thermal annealing and wet-chemical treatment of SiO2-supported graphene devices. Nano Letters. ,vol. 11, pp. 767- 771 ,(2011) , 10.1021/NL103977D
Minhyeok Choe, Chu-Young Cho, Jae-Phil Shim, Woojin Park, Sung Kwan Lim, Woong-Ki Hong, Byoung Hun Lee, Dong-Seon Lee, Seong-Ju Park, Takhee Lee, Au nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices Applied Physics Letters. ,vol. 101, pp. 031115- ,(2012) , 10.1063/1.4737637