Enhanced opto-electrical properties of graphene electrode InGaN/GaN LEDs with a NiOx inter-layer
作者： Caichuan Wu , Fengyuan Liu , Bin Liu , Zhe Zhuang , Jiangping Dai
DOI: 10.1016/J.SSE.2015.03.005
关键词:
摘要: We report the fabrication of gallium nitride (GaN)-based light-emitting diode (LED) with uniform and monolayer graphene as transparent current spreading layer. Two-dimensional successfully provides efficient hole injection into active layers LEDs for light emission. To further reduce ohmic contact resistance between p-GaN film, ultrathin NiOx inter-layer is introduced in device, improving its electrical optical performance.
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