Rectifying electronic transport and the role of Fowler-Nordheim tunneling in Ag/PVDF/Au capacitor structures

作者: K. Pramod , R.B. Gangineni

DOI: 10.1016/J.CAP.2017.08.012

关键词: NanotechnologyField electron emissionOptoelectronicsPolyvinylidene fluorideCapacitorQuantum tunnellingMaterials scienceElectrodeSpace chargeSchottky diodeThin film

摘要: Abstract The electron transport through β phase dominant Polyvinylidene fluoride (PVDF) thin films in its intrinsic form is investigated and reports the stable rectification up to ±30 V Ag/PVDF/Au capacitor structures. A practical resistance ratio of ∼40 between −1 V 1 V a maximum ∼77 at −24 V 24 V exhibits potential usage selector devices. Furthermore, nonpolar electronic analysed with Schottky, Space Charge Limited Current (SCLC), Poole-Frenkel (PF) Fowler-Nordheim (FN) tunneling mechanisms respect electrode, thickness temperature variations.

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