Abundance of Excited Ions in an NO+ Ion Beam

作者: R. F. Mathis , B. R. Turner , J. A. Rutherford

DOI: 10.1063/1.1670366

关键词: AttenuationIon beamIon beam depositionBeam (structure)ChemistryIonExcited stateElectronAtomic physicsIon sourcePhysical and Theoretical ChemistryGeneral Physics and Astronomy

摘要: A study of a beam NO+ ions has been undertaken to determine the relative abundances excited‐state and ground‐state ions. The experimental procedure involved attenuation ion in gas‐filled reaction chamber where different states were attenuated at rates. produced from NO by impact electrons with energies 25, 50, 100 eV. determined ∼20 μsec after formed, so that only long‐lived remained beam. Several gases, H2, N2, O2, H2O, Ar, employed assess importance de‐excitation processes reduce possibility identical‐loss cross sections for excited ground states. It was found high pressures source, as well electron energy, could influence abundance typical result that, using 50‐eV low source pressures, 42% excited.

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