Global Simulation of Coupled Carbon and Oxygen Transport in a Unidirectional Solidification Furnace for Solar Cells
作者： B. Gao , S. Nakano , K. Kakimoto
DOI: 10.1149/1.3262584
关键词: Silicon 、 Chemical reaction 、 Oxygen transport 、 Impurity 、 Carbon 、 Materials science 、 Chemical engineering 、 Volumetric flow rate 、 Melt flow index 、 Oxygen
摘要: For an accurate prediction of carbon and oxygen impurities in multicrystalline silicon material for solar cells, global simulation coupled transport a unidirectional solidification furnace was implemented. Both the gas flow melt were considered. Five chemical reactions included during transportation impurities. The results agreed well with experimental data. effects rate pressure on examined. An increase can reduce both crystal, though reduction is more obvious. also obviously impurity but has only small effect impurity.
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