Method of manufacturing a flash memory structure

摘要: A flash memory structure is formed by a method comprising the steps of providing semiconductor substrate, and then forming shallow first trench within substrate. Thereafter, buried doped region underneath so that at distance from substrate surface. The one major aspect in this invention can be applied to processing isolation capable reducing device area. Next, deeper second etched has greater depth than trench. Subsequently, insulating material deposited into trench, stacked gate above Later, surface source drain are on two sides structure. Through thermal operation, alternately connects with form common region.