Process for fabricating a bit-line using buried diffusion isolation

摘要: A process for fabricating a MONOS device having buried bit-line includes providing semiconductor substrate and forming an ONO structure overlying the substrate. Thereafter, hard mask layer is formed to overlie structure, upper surface. To form trench bit-line, etch performed on structure. silicon dioxide deposited fill trench. control thickness of dioxide, chemical-mechanical-polishing planarize planar surface continuous with layer. Finally, removed remaining forms uniform oxide