Method for fabricating EPROM array

摘要: Using a method according to one embodiment of the present invention, an EPROM array may be fabricated providing dense array. First polycrystalline silicon floating gates are formed and partially patterned on surface substrate. A thin thermally grown oxide layer is then over entire The source/drain regions implanted through dioxide into Next thick deposited by chemical vapor deposition coated with photoresist which, because its nature, provides planarized top photoresist. etched using etching process which ratio 1 between dioxide. completely away thus leaving surface. further so that surfaces exposed. An interlevel insulator active insulator. In another step for forming refractory metal silicide bitlines included. use silicided in this type precluded prior art field must techniques. growth very difficult if not impossible.