Negative Magnetoresistance and Inelastic Scattering Time in Two-Dimensional Electron Systems in GaAs/AlxGa1-xAs Heterojunction Interfaces

作者: Toshiaki Nambu , Shinji Kawaji , Keiju Kuboki , Yoichi Kawaguchi , Junji Yoshino

DOI: 10.1143/JPSJ.53.682

关键词: MagnetoresistanceHeterojunctionInelastic scatteringAtomic physicsCondensed matter physicsFermi gasElectronAngular dependencePhysicsGeneral Physics and Astronomy

摘要: Angular dependence and temperature of negative magnetoresistance in two-dimensional electron gas GaAs/Al x Ga 1- As ( ≃0.3) heterostructure are measured at temperatures between 4.2 K 1.1 K. The τ e is analysed by a theory developed recently Fukuyama Abrahams. experimental -1 the dirty limit smaller than theoretical one factor 1.5 ∼2.3.

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