Inelastic scattering processes in GaAs/n-AlGaAs selectively doped heterojunctions with InGaAs quantum dots
作者： T Kawazu , T Noda , H Sakaki
DOI: 10.1016/J.PHYSE.2003.11.079
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摘要: Inelastic scattering processes of the two-dimensional electron gas (2DEG) in both normal and inverted n-AlGaAs/GaAs heterojunction FET structures have been studied, for case where InGaAs dots are embedded vicinity GaAs channel. By analyzing magnetoresistance data, inelastic time τ i n is determined as a function concentration N 2 D 2D electrons shown to be reduced by 10-40% presence dots. investigating GaAs/n-AlGaAs with dots, we varied percentage P o c charged filled an found that decreases increases, indicating rate 2DEG higher than neutral ones.
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