WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake
作者： Nicolò Oliva , Jonathan Backman , Luca Capua , Matteo Cavalieri , Mathieu Luisier
DOI: 10.1038/S41699-020-0142-2
关键词: Subthreshold slope 、 Optoelectronics 、 Orders of magnitude (numbers) 、 Subthreshold conduction 、 Figure of merit 、 Quantum tunnelling 、 Heterojunction 、 Materials science 、 MOSFET 、 van der Waals force
摘要: … In this work, we reported co-integrated subthermionic 2D/2D WSe 2 /SnSe 2 tunnel FET and … The demonstrated heterojunction device provides a new insight in the potential of 2D/2D …
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