Nondestructive imaging of buried interfaces in SiC and GaN Schottky contacts using scanning internal photoemission microscopy

摘要: We demonstrate a nondestructive characterization of buried interfaces in metal/wide-bandgap semiconductor contacts by using scanning internal photoemission microscopy. For Ni/n-SiC annealed at temperatures above 400 °C, reduction the Schottky barrier height owing to partial interfacial reaction was visualized. In Au/Ni/n-GaN contacts, upon annealing thermal degradation from scratch on dot observed. Forward current–voltage curves were reproduced lowering and area reacted regions this method. The present imaging method exploits its highly sensitive extinction for characterizing formed wide-gap materials.