Post-deposition treatments of electrodeposited cu(in-ga)se2-based thin films
作者： Brian E. Mccandless , Kevin D. Dobson , Robert W. Birkmire , Estela M. Calixto
DOI:
关键词: Materials science 、 Crystallite 、 Selenium 、 Nuclear chemistry 、 Single bath 、 Thin film 、 Annealing (metallurgy) 、 Electrode 、 Aqueous solution 、 Metallurgy 、 Stoichiometry
摘要: Single bath electrodeposition of polycrystalline Cu(In, Ga)Se2 thin films for photovoltaic applications is disclosed. Specifically, was deposited onto Mo electrodes from low concentration buffered (pH 2.5) aqueous baths containing CuCI2, InCI3, GaCI3 and H2SeO3. Moreover, are disclosed wherein Se4+/Cu2+ ratios were controlled to optimize Se Cu levels, while In3+ adjusted control In Ga. Further pre- post-deposition processing methods resulting in smooth, compact, crack-free near stoichiometric values. Post deposition heat treatments on electrodeposited CulnSe2-based selenium sulfur atmosphere described. a single baths. Heat treatment Cu(In,Ga)Se2 H2Se producing an O-free crystalline film annealing Se-vapor CuInSe2 without loss Ga or O.
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